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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5490 2N5492 2N5494 2N5496 DESCRIPTION With TO-220 package High power dissipation APPLICATIONS For used in medium power and amplifier applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings(Ta=25ae ) SYMBOL PARAMETER 2N5490/5494 2N5492 VCBO Collector-base voltage VCEO Collector-emitter voltage CHA IN NG S 2N5496 2N5492 2N5496 OND MIC E Open emitter Open base Open collector CONDITIONS TOR UC VALUE 60 75 90 40 55 70 5 7 3 UNIT V 2N5490/5494 V VEBO IC IB PT Tj Tstg Emitter-base voltage Collector current Base current Total power dissipation Junction temperature Storage temperature V A A W ae ae TC=25ae 50 150 -65~150 THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance from junction to case MAX 2.5 UNIT ae /W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER 2N5490/5494 VCEO(SUS) Collector-emitter sustioning voltage 2N5492 2N5496 2N5490 Collector-emitter saturation voltage 2N5492 2N5494 2N5496 2N5490 2N5492 VBE Base-emitter on voltage SYMBOL 2N5490 2N5492 2N5494 2N5496 CONDITIONS MIN 40 TYP. MAX UNIT IC=0.1A ;IB=0 55 70 V IC=2.0A;IB=0.2A IC=2.5A;IB=0.25A 1.0 IC=3.0A;IB=0.3A IC=3.5A;IB=0.35A IC=2.0A ; VCE=4V IC=2.5A ; VCE=4V IC=3.0A ; VCE=4V IC=3.5A ; VCE=4V 1.1 1.3 V 1.5 V VCEsat ICEV ICER IEBO 2N5494 2N5496 2N5492 2N5490/5494 2N5496 Collector cut-off current Collector cut-off current Emitter cut-off current INC NG S HA 2N5490 2N5492 CON EMI VCE=70V;VBE=1.5V VCE=55V;VBE=1.5V VCE=85V;VBE=1.5V VEB=5V; IC=0 IC=2.0A ; VCE=4V IC=2.5A ; VCE=4V TOR DUC 1.7 1.0 0.5 1.0 mA VCE=Rated VCEO;RBE=100| mA mA hFE DC current gain 2N5494 2N5496 IC=3.0A ; VCE=4V IC=3.5A ; VCE=4V IC=0.5A ; VCE=4V 20 100 fT Transition frequency 0.8 MHz 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2N5490 2N5492 2N5494 2N5496 NG S HA INC Fig.2 Outline dimensions(unindicated tolerance:A CON EMI TOR DUC 0.10 mm) 3 |
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